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NTR2101P
TYPICAL CHARACTERISTICS
2500
2000
V DS = 0
V GS = 0
T J = 25 ° C
5
4
V DS
Q T
V GS
5
4
1500
C ISS
3
3
1000
500
C RSS
C OSS
2
1
Q GS
Q DS
T J = 25 ° C
I D = ? 3.5 A
2
1
0
? 4
? 2
0
? V GS ? V DS
2
4
6
8
0
0
2
4 6 8 10
Q G , TOTAL GATE CHARGE (nC)
12
0
14
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
Figure 8. Gate ? to ? Source and
Drain ? to ? Source Voltage versus Total Charge
6
V DD = ? 4.0 V
I D = ? 1.0 A
V GS = ? 4.5 V
5
V GS = 0 V
T J = 25 ° C
100
10
t d(off)
t f
t r
4
3
2
t d(on)
1
1
1
10
100
0
0.3
0.45
0.6
0.75
0.9
1.05
1.2
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
10
1
0 V < V GS < 8 V
SINGLE PULSE
? V SD , SOURCE ? TO ? DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
100 m s
1 ms
10 ms
100 ms
0.1
T C = 25 ° C
R DS(on) LIMIT
THERMAL LIMIT
dc
0.01
0.1
PACKAGE LIMIT
1
10
100
? V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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